InSb0.2As0.8

semiconductor

· InSb0.2As0.8

InSb₀.₂As₀.₈ is a III-V compound semiconductor alloy combining indium antimonide and indium arsenide in a 20:80 ratio. This material belongs to the indium arsenide family and is engineered to tune the bandgap and lattice properties between pure InAs and InSb end members. InSb₀.₂As₀.₈ is primarily of research and specialized device interest for infrared photonics, narrow-bandgap optoelectronics, and high-mobility electron transport applications where the intermediate composition offers a balance between InAs's higher electron mobility and InSb's lower bandgap energy.

infrared detectors and sensorsquantum well heterostructureshigh-electron-mobility transistors (HEMT)narrow-bandgap optoelectronicsresearch photonics devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSb0.2As0.8

Electrical Properties

Regulatory Screening

Environmental

Export Control