InS₃ is an indium sulfide ceramic compound belonging to the III–VI semiconductor family, potentially useful as a wide-bandgap material for optoelectronic and photonic applications. Industrial deployment remains limited, but the material is studied for thin-film solar cells, photodetectors, and other light-responsive devices where its semiconducting properties could offer advantages over traditional silicon or cadmium-based alternatives in niche high-temperature or UV-sensitive applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.267 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06990 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.00686 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data