InP₂Se₄ is an indium-based ternary chalcogenide semiconductor compound combining indium phosphide and indium selenide chemistry. This material remains primarily in the research and development phase, studied for its potential in optoelectronic and photovoltaic applications where tunable bandgap and mixed-anion semiconductors offer advantages over binary alternatives like InP or InSe alone. The material family is of interest for next-generation solar cells, photodetectors, and thin-film electronics where the P-Se composition ratio can be engineered to optimize light absorption and charge transport.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.290 | eV | — |