InNO is an indium-containing ceramic compound combining indium nitride (InN) with an oxide phase, belonging to the family of wide-bandgap semiconductors and ceramic materials. This material is primarily of research and development interest for optoelectronic and high-temperature electronic applications, where its unique combination of nitride and oxide phases offers potential advantages in thermal stability and electrical properties compared to conventional binary nitrides or oxides alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 96.00 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3900 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 11.14 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.075 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.907 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.9548 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data