InNF₃ is an indium nitride fluoride ceramic compound that represents an emerging material in the nitride ceramics family. While not yet widely commercialized, this composition combines indium nitride's semiconductor properties with fluoride chemistry, positioning it for potential applications in high-temperature electronic devices, wide-bandgap semiconductor technologies, and advanced thermal management systems where conventional nitride ceramics may have limitations. Its development reflects ongoing research into ternary nitride fluorides for next-generation optoelectronic and power electronics applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.721 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.470 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6042 | eV/atom | — |