InNaO₂S is a ternary semiconductor compound combining indium, sodium, oxygen, and sulfur elements, representing an emerging material in the family of mixed-metal oxide-sulfides. This compound is primarily of research interest for optoelectronic and photocatalytic applications, where its mixed-anion structure offers potential for tunable bandgap and enhanced light absorption compared to single-component oxides or sulfides. Engineers evaluating this material should note it remains largely experimental; its adoption would depend on demonstrating performance advantages in specific photon-conversion or sensing applications where conventional semiconductors (GaAs, CdTe, or metal oxides) prove insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5000 | eV | — | ||
Magnetic Moment(μB) | -0.000384 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.300 | eV/atom | — |