InNaO2N

ceramic

· InNaO2N

InNaO2N is an experimental ceramic compound containing indium, sodium, oxygen, and nitrogen elements, representing a mixed-anion ceramic in the oxynitride family. This material remains primarily in research and development phase, with potential applications in semiconductor, optoelectronic, and photocatalytic domains where the combination of cationic and anionic diversity can enable tunable band structure and enhanced functional properties. The nitride/oxide hybrid composition offers promise for engineering next-generation materials with customized electronic and ionic transport characteristics, though industrial adoption pathways are not yet established.

semiconductor researchphotocatalytic applicationsoptoelectronic devicesthin film coatingsenergy storage researchexperimental materials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.430	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InNaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental