InMgOFN

ceramic

· InMgOFN

InMgOFN is an experimental oxynitride ceramic compound combining indium, magnesium, oxygen, and nitrogen phases. This material family is under research for applications requiring high-temperature stability, wide bandgap semiconducting behavior, or enhanced mechanical properties through mixed anionic systems. The oxynitride approach offers potential advantages over traditional oxides or nitrides alone by tuning electronic properties and thermal performance, though industrial deployment remains limited and the material is primarily found in academic and materials development contexts.

high-temperature ceramics researchwide-bandgap semiconductorsoxynitride coatingsthermal barrier materialsadvanced refractory applicationsmaterials innovation prototyping

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.281	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.220	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InMgOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental