InMgO2N

ceramic

· InMgO2N

InMgO₂N is an experimental ternary ceramic compound containing indium, magnesium, oxygen, and nitrogen. This material belongs to the oxynitride ceramic family, which combines the structural benefits of oxides with the hardness and thermal stability of nitrides. As a research-phase compound, InMgO₂N is being investigated for high-temperature structural applications and advanced electronic/photonic devices where conventional oxides or nitrides alone prove insufficient, though industrial production and widespread adoption remain limited.

High-temperature structural ceramicsWide-bandgap semiconductorsPhotocatalytic coatingsRefractory materials researchAdvanced electronics substrates

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.152	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.360	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InMgO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental