InMgN3

ceramic

· InMgN3

InMgN3 is an experimental ternary nitride ceramic compound combining indium, magnesium, and nitrogen. This material belongs to the family of wide-bandgap semiconductors and advanced ceramics under active research for next-generation electronic and optoelectronic devices. As a research-phase compound, InMgN3 is not yet in widespread commercial production but shows potential for high-temperature applications, wide-bandgap semiconductor devices, and potentially novel optical or thermal management systems where the combined properties of indium nitride and magnesium nitride offer advantages over binary nitride alternatives.

wide-bandgap semiconductors (research)high-temperature electronicsoptoelectronic devices (exploratory)thermal management compositesadvanced ceramic coatingsnext-generation power electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00129	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.960	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InMgN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental