InInN3 — Properties & Data | MatWorld

InInN3

ceramic

· InInN3

InInN3 is an experimental indium nitride-based ceramic compound belonging to the III-nitride family of wide-bandgap semiconductors. This material is primarily investigated in research settings for high-performance optoelectronic and power electronic applications, where its nitride composition offers potential advantages in thermal stability and electronic properties compared to conventional semiconductors.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature power electronicsresearch and developmentIII-nitride compoundsemerging photonic applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	4.995	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.980	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental