InHfON2

ceramic

· InHfON2

InHfON₂ is an experimental ceramic compound combining indium, hafnium, oxygen, and nitrogen—a high-entropy oxynitride material designed for extreme thermal and chemical environments. This material family is primarily in research and development stages, investigated for advanced gate dielectrics, diffusion barriers, and thermal barrier applications in semiconductor and aerospace contexts where conventional oxides reach performance limits. The quaternary composition strategy aims to leverage high-entropy stabilization effects to improve thermal stability, phase purity, and resistance to crystallization compared to binary or ternary ceramic alternatives.

semiconductor gate dielectricsthermal barrier coatingsdiffusion barriers (advanced nodes)high-temperature structural ceramicsresearch/development materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.3983	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InHfON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental