InHfOFN

ceramic

· InHfOFN

InHfOFN is an experimental high-k dielectric ceramic compound combining indium, hafnium, oxygen, and fluorine/nitrogen species, developed for advanced semiconductor and microelectronic device applications. This material belongs to the family of complex oxide ceramics engineered to provide improved dielectric properties and thermal stability compared to conventional gate oxides, making it a candidate for next-generation transistor gate stacks and integrated circuit manufacturing where conventional silicon dioxide becomes limiting.

semiconductor gate dielectricsadvanced integrated circuitshigh-k dielectric layersmicroelectronic devicesresearch/experimental materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	8.429e-8	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InHfOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental