InHfO3

ceramic

· InHfO3

InHfO3 is an indium hafnium oxide ceramic compound that combines the high-κ dielectric properties of both constituent oxides. This mixed-metal oxide is primarily of research and development interest for advanced microelectronics and thin-film applications, where it is being investigated as a gate dielectric and high-permittivity material to replace conventional SiO2 in scaled semiconductor devices. Its notable advantage is the potential for improved dielectric strength and thermal stability compared to single-component oxides, making it relevant for next-generation logic and memory devices operating at reduced dimensions.

gate dielectricshigh-κ insulatorsadvanced microelectronicsthin-film capacitorssemiconductor researchnext-generation logic devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)2 entries	0.000	μB	—
↳	0.00146	μB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-2.651	eV/atom	—
↳	0.3400	eV/atom	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InHfO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental