InHfO2S

ceramic

· InHfO2S

InHfO2S is an experimental ternary ceramic compound combining indium, hafnium, oxygen, and sulfur phases. This material belongs to the family of mixed-metal oxysulfide ceramics under active research for next-generation electronics and photocatalytic applications. While not yet in widespread commercial use, indium-hafnium oxide-based systems are being investigated for their potential in high-κ dielectric applications, wide-bandgap semiconductors, and environmental remediation technologies where combined optical and electrical properties are advantageous.

high-κ dielectrics (research)wide-bandgap semiconductorsphotocatalytic water treatmentoptical coatings (development)thin-film electronics (exploratory)environmental remediation catalysts

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.1463	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InHfO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental