InGeON2 — Properties & Data | MatWorld

InGeON2

ceramic

· InGeON2

InGeON2 is a ceramic compound combining indium, germanium, oxygen, and nitrogen—a nitride-oxide material that bridges semiconductor and ceramic functionality. While not widely commercialized in mainstream engineering, this material family is of interest in research contexts for high-temperature electronic applications and potentially as a wide-bandgap semiconductor alternative, where the combined nitrogen and oxygen coordination may offer thermal stability or unique dielectric properties distinct from binary oxides or nitrides alone.

wide-bandgap semiconductorshigh-temperature electronics researchthin-film dielectricscompound semiconductor developmentthermal barrier coatings (experimental)optoelectronic device research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.00117	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.160	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InGeON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental