InGaPd is a ternary intermetallic ceramic compound combining indium, gallium, and palladium elements, belonging to the class of advanced ceramic intermetallics. This material is primarily of research interest rather than established in volume production, with potential applications in high-temperature structural applications and electronic device substrates where the combination of ceramic hardness and metallic conductivity is valuable. InGaPd and related ternary ceramics are investigated for applications requiring simultaneous thermal stability, mechanical strength, and electrical or thermal transport properties at elevated temperatures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 72.66 | GPa | — | ||
Poisson's Ratio(ν) | 0.4500 | - | — | ||
Shear Modulus(G) | 5.650 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.852 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3493 | eV/atom | — |