InGaO₃ is an indium gallium oxide ceramic compound that belongs to the family of mixed-metal oxides, which are of significant interest in semiconductor and optoelectronic research. While not yet in widespread commercial production, this material is being investigated for applications requiring wide bandgap semiconductors and transparent conducting oxides, potentially offering advantages in high-temperature electronics, UV detection, and advanced optoelectronic devices where conventional semiconductors reach performance limits. The indium-gallium oxide family represents an emerging class of materials aimed at next-generation applications in power electronics and photonics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 177.9 | GPa | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G) | 75.97 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.495 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 1.584 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 13.02 | - | — | ||
| ↳ | 8.709 range 4.603–12.81median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB)2 entries | 0.00181 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -52.07 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.338 | eV/atom | — | ||
| ↳ | 0.6000 | eV/atom | — | ||
| ↳ | -1.866 | eV/atom | — |