InGaO₂ is an indium-gallium oxide ceramic compound belonging to the family of wide-bandgap semiconducting oxides. This material is primarily investigated in research contexts for transparent electronics and optoelectronic device applications, where its semiconductor properties combined with optical transparency offer advantages over conventional materials like silicon or gallium arsenide. InGaO₂ represents an emerging class of materials for next-generation high-temperature, high-power, and transparent device engineering where conventional semiconductors reach their limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 70.17 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.4100 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 25.76 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.006 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2040 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 12.95 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4231 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.189 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data