InGaCu₂Se₄ is a quaternary semiconductor compound belonging to the chalcopyrite family, combining indium, gallium, copper, and selenium elements. This material is primarily of research and developmental interest for optoelectronic and photovoltaic applications, where its tunable bandgap and mixed-cation structure offer potential advantages over binary or ternary semiconductors in light absorption and charge transport. Engineering consideration of this compound is driven by its potential in next-generation thin-film solar cells and photodetectors where compositional flexibility and cost reduction compared to conventional III-V semiconductors are valued.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.06 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 25.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.469 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02200 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00330 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4479 | eV/atom | — |