InGaAg₂Se₄ is a quaternary semiconductor compound combining indium, gallium, silver, and selenium in a fixed stoichiometric ratio. This material belongs to the I-III-VI₂ ternary semiconductor family and is primarily of research interest rather than established in high-volume production, with potential applications in optoelectronic and photovoltaic device research where tunable band gaps and mixed-cation flexibility are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.527 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04100 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 17.08 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000700 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4014 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data