InEuO3 — Properties & Data | MatWorld

InEuO3

semiconductor

· InEuO3

InEuO3 is a rare-earth doped indium oxide semiconductor compound combining indium oxide with europium dopants to modify electronic and optical properties. This is primarily a research material used to explore enhanced luminescence, photocatalytic activity, and semiconducting behavior in next-generation optoelectronic devices, with potential applications where tunable bandgap or rare-earth emission characteristics are advantageous over undoped indium oxide.

photocatalytic water splittingoptical sensors and phosphorsoptoelectronic device researchthin-film semiconductorsrare-earth luminescence studiesadvanced ceramics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7920	eV	DFT · PBE
Magnetic Moment(μB)	0.2000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.136	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InEuO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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