Indium phosphide (InP) is a III-V binary compound semiconductor with a direct bandgap, widely recognized for high-speed and high-frequency device performance. It is the material of choice for optoelectronic and RF applications where superior electron mobility and saturation velocity enable operation at frequencies and data rates that exceed silicon and gallium arsenide alternatives. InP's direct bandgap makes it especially valuable for integrated photonics, long-wavelength infrared detectors, and millimeter-wave integrated circuits used in telecommunications, aerospace, and emerging 5G/6G systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | 61.00 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 1,335 | K | — | ||
Specific Heat Capacity(Cp) | 310 | J/(kg·K) | — | ||
Thermal Conductivity(k) | 68.00 | W/(m·K) | — | ||
Coefficient of Thermal Expansion(α (CTE)) | 0.00000460 | 1/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.810 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.340 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 12.50 | - | — |