Indium phosphide (InP) is a III-V binary compound semiconductor with a direct bandgap, widely recognized for high-speed and high-frequency device performance. It is the material of choice for optoelectronic and RF applications where superior electron mobility and saturation velocity enable operation at frequencies and data rates that exceed silicon and gallium arsenide alternatives. InP's direct bandgap makes it especially valuable for integrated photonics, long-wavelength infrared detectors, and millimeter-wave integrated circuits used in telecommunications, aerospace, and emerging 5G/6G systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | 61.00 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 1,335 | K | — | ||
Specific Heat Capacity(Cp) | 310 | J/(kg·K) | — | ||
Thermal Conductivity(k)2 entries | 85.20 | W/(m·K) | Measured | ||
| ↳ | 68.00 | W/(m·K) | — | ||
Coefficient of Thermal Expansion(α (CTE)) | 0.00000460 | 1/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.810 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 1.500 | eV | Measured | ||
| ↳ | 1.340 | eV | — | ||
| ↳ | 0.3310 | eV | DFT · OptB88vdW | ||
| ↳ | 1.387 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 12.50 | - | — | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 23.59 | - | DFT · OptB88vdW | ||
| ↳ | 8.039 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.05000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.1400 | me | DFT · OptB88vdW · 27°C | ||
Thermoelectric Power Factor(PF)2 entries | 0.000146 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00320 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -29.47 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 259.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.85 | % | DFT · TBmBJ |
3 interactive curves for this material
Stress-strain, S-N fatigue and environmental knockdown curves are free with an account.
Create free account| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Extinction Coefficient vs Wavelength(k(λ)) | Curve (46 pts) | - | Measured | ||
Refractive Index vs Wavelength(n(λ))2 entries | Curve (46 pts) | - | Measured | ||
| ↳ | Curve (101 pts) | - | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3902 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data