Indium Gallium Arsenide (InGaAs) is a III-V compound semiconductor formed by alloying indium, gallium, and arsenic, engineered to achieve a bandgap optimized for infrared wavelengths around 1.0–1.7 μm depending on composition. It is the dominant material for high-speed photodetectors, avalanche photodiodes (APDs), and focal plane arrays used in telecommunications, remote sensing, and spectroscopy, where its direct bandgap and high electron mobility enable superior sensitivity to near-infrared light compared to silicon-based detectors. Engineers select InGaAs specifically for long-wavelength fiber-optic communication systems (1.55 μm C-band and L-band), thermal imaging, and precision laser measurement applications where silicon reaches its detection limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 5.000 | W/(m·K) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.500 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7500 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.90 | - | — |