Indium Gallium Arsenide (InGaAs)

Verifiedsemiconductor
· InGaAs· In0.53Ga0.47As· InGaAs lattice-matched to InP

Indium Gallium Arsenide (InGaAs) is a III-V compound semiconductor formed by alloying indium, gallium, and arsenic, engineered to achieve a bandgap optimized for infrared wavelengths around 1.0–1.7 μm depending on composition. It is the dominant material for high-speed photodetectors, avalanche photodiodes (APDs), and focal plane arrays used in telecommunications, remote sensing, and spectroscopy, where its direct bandgap and high electron mobility enable superior sensitivity to near-infrared light compared to silicon-based detectors. Engineers select InGaAs specifically for long-wavelength fiber-optic communication systems (1.55 μm C-band and L-band), thermal imaging, and precision laser measurement applications where silicon reaches its detection limits.

fiber-optic photodetectorsinfrared focal plane arraysavalanche photodiodestelecommunications receiversthermal imaging sensorshyperspectral remote sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Thermal Conductivity(k)
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W/(m·K)——
Verified Unverified Low confidence (<80%) Link to source
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Density(ρ)
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kg/m³——
Verified Unverified Low confidence (<80%) Link to source
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Band Gap(Eg)
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Dielectric Constant (Relative Permittivity)(εr)
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Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.