InCuO2N is an experimental oxynitride ceramic compound containing indium, copper, oxygen, and nitrogen. This material belongs to the emerging class of multivalent transition metal oxynitrides, which are being researched for their potential to combine the structural stability of oxides with the electronic and optical properties conferred by nitrogen incorporation. While not yet in widespread industrial production, oxynitrides of this type are of particular interest in photocatalysis, semiconductor applications, and functional ceramics where nitrogen doping can modify bandgap energy and enhance charge carrier mobility compared to conventional oxide counterparts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.00140 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.260 | eV/atom | — |