InCuO2 is an indium-copper oxide ceramic compound that belongs to the family of mixed metal oxides with potential applications in electronic and photonic devices. While not a widely established commercial material, compounds in this oxide family are of research interest for semiconducting, catalytic, and transparent conductive properties. Engineers would consider InCuO2 primarily in exploratory projects involving oxide-based electronics, thin-film deposition, or catalytic systems where the specific combination of indium and copper chemistry offers advantages over single-metal alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 120.8 | GPa | — | ||
| ↳ | 132.3 | GPa | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G)2 entries | 36.63 | GPa | — | ||
| ↳ | 43.42 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.193 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4640 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.960 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -117.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01450 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.270 | eV/atom | — |