InCdO2N

ceramic

· InCdO2N

InCdO2N is an experimental quaternary ceramic compound combining indium, cadmium, oxygen, and nitrogen—a member of the oxynitride family being explored for advanced optoelectronic and semiconductor applications. This material is primarily a research-stage compound investigated for its potential in photocatalysis, thin-film transistors, and visible-light-active photocatalytic devices, where the nitrogen incorporation is expected to narrow the bandgap compared to traditional oxide counterparts. Engineers would consider this material when seeking nitrogen-doped oxide alternatives with tunable electronic properties, though commercial availability and scalability remain limited to specialized research applications.

photocatalytic devicesthin-film transistorsvisible-light photocatalysisresearch semiconductorsoptoelectronic coatingswide-bandgap engineering

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.385	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.700	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InCdO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental