InBr is an indium bromide ceramic compound belonging to the III-V semiconductor and halide ceramic family. It is primarily investigated in research and specialized optoelectronic applications, particularly for infrared (IR) window materials, radiation detection, and photonic devices where its wide bandgap and optical transparency in specific wavelength regions are advantageous. Engineers consider InBr when designing systems requiring thermal stability, chemical resistance, or IR transmission in harsh environments, though it remains less common than established alternatives like GaAs or CdZnTe due to limited commercial availability and processing complexity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 12.56 | GPa | — | ||
| ↳ | 17.87 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G)2 entries | 6.379 | GPa | — | ||
| ↳ | 9.020 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.932 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.556 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 44.36 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -137.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01680 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.1062 | eV/atom | — | ||
| ↳ | -0.7555 | eV/atom | — |