InBN3

ceramic

· InBN3

InBN3 is a ceramic compound composed of indium, boron, and nitrogen, representing a material in the wide-bandgap semiconductor or boron nitride family. This appears to be a research or emerging compound rather than an established commercial material; materials in this chemical system are of interest for high-temperature electronics, optoelectronics, and potentially as wide-bandgap alternatives to conventional semiconductors. Engineers would consider indium-boron-nitride compounds for applications requiring thermal stability, electrical properties superior to silicon in extreme environments, or compatibility with wide-bandgap device architectures, though availability and processing maturity should be verified for production use.

wide-bandgap semiconductorshigh-temperature electronicsresearch/development materialsoptoelectronic devicesthermal managementnext-generation power electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00246	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InBN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental