InBiO2N is an experimental oxynitride ceramic compound combining indium, bismuth, oxygen, and nitrogen elements. This material belongs to the family of mixed-anion ceramics being researched for photocatalytic and optoelectronic applications, where the incorporation of nitrogen into oxide frameworks is designed to modify bandgap energy and enhance light-absorption properties. InBiO2N remains primarily a laboratory-stage material; its development is driven by interest in visible-light-active photocatalysts for environmental remediation and potential thin-film semiconductor applications where traditional oxide ceramics show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00600 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.260 | eV/atom | — |