InBiN3

ceramic

· InBiN3

InBiN3 is a ternary ceramic compound combining indium, bismuth, and nitrogen, representing an emerging material within the family of metal nitride ceramics. This composition sits at the intersection of semiconductor and structural ceramic research, with potential applications in high-temperature, high-energy-density, or optoelectronic device contexts where conventional nitrides reach performance limits. While primarily in development stages, InBiN3 and related indium-bismuth nitrides are of interest for next-generation wide-bandgap semiconductor applications, thermal management in extreme environments, or as precursor phases in advanced material synthesis.

research and development (experimental)wide-bandgap semiconductorshigh-temperature ceramicsoptoelectronic devicesthermal management materialsadvanced nitride composites

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.147	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InBiN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental