InBaON2 is an experimental ternary ceramic compound combining indium, barium, oxygen, and nitrogen—a member of the oxynitride ceramic family designed to explore novel material properties at the intersection of oxide and nitride chemistry. Research into such mixed-anion ceramics typically targets applications requiring enhanced thermal stability, wide bandgap semiconductivity, or improved mechanical performance in demanding environments; InBaON2 specifically remains largely in development phase and would be of interest to materials researchers investigating high-temperature structural ceramics, wide-bandgap photonic devices, or next-generation refractories, though industrial deployment data is limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.2781 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.520 | eV/atom | — |