InBaO2N is an experimental oxynitride ceramic compound containing indium, barium, oxygen, and nitrogen. This material belongs to the family of mixed-anion ceramics (oxynitrides), which are research-phase compounds being explored for their potential to combine desirable properties of oxides and nitrides—such as improved mechanical strength, thermal stability, and electronic functionality. While not yet in widespread industrial production, InBaO2N and related oxynitride systems are of interest in the photocatalysis, semiconductor, and advanced structural ceramic communities as potential alternatives to conventional oxides for applications demanding enhanced performance or novel functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.789 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.980 | eV/atom | — |