InAsON2

ceramic

· InAsON2

InAsON2 is an experimental III-V oxynitride ceramic compound combining indium arsenide with oxygen and nitrogen elements. While not yet widely commercialized, this material belongs to the emerging family of oxynitride semiconductors being investigated for wide-bandgap electronic and photonic applications. Research interest centers on potential use in high-temperature electronics, UV optoelectronics, and next-generation power devices where conventional III-V semiconductors reach performance limits.

high-temperature semiconductorswide-bandgap electronicsUV optoelectronic devicespower conversion systemsexperimental compound research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.1362	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.260	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAsON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental