InAsOFN

ceramic

· InAsOFN

InAsOFN is an experimental oxynitride ceramic compound based on indium arsenide chemistry, representing research into mixed-anion ceramics that combine oxide and nitride bonding. This material family is investigated for potential applications requiring enhanced thermal stability, wide bandgap properties, or unique optical characteristics compared to conventional III-V semiconductors or simple oxide ceramics. The oxynitride composition offers theoretical advantages in tuning electronic properties and thermal performance, though this specific compound remains largely in the research phase with limited commercial deployment.

experimental semiconductor researchwide-bandgap electronicsthermal management coatingsoptoelectronic deviceshigh-temperature ceramics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	4.504e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAsOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental