InAsO2S

ceramic

· InAsO2S

InAsO2S is an experimental mixed-anion ceramic compound containing indium, arsenic, oxygen, and sulfur—representing a class of quaternary semiconducting oxysulfides under investigation for optoelectronic and photocatalytic applications. This material family bridges conventional III-V semiconductors (InAs) with oxide chemistry, offering potential for tunable bandgap and enhanced light absorption in the visible-to-near-infrared range. Research into InAsO2S and related oxysulfides is driven by interest in photocatalysis, solar energy conversion, and integrated photonic devices where conventional binary compounds prove insufficient.

photocatalytic materials (research)visible-light photocatalysissolar cells (experimental)optoelectronic semiconductorsbandgap engineeringwater splitting (research phase)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000704	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAsO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental