InAlO2S is a mixed-metal oxysulfide ceramic compound containing indium, aluminum, oxygen, and sulfur. This is an exploratory/research-phase material investigated for potential applications in optoelectronics and solid-state device engineering, where the combination of oxysulfide character may enable tunable bandgap, photocatalytic activity, or ion-conducting properties. While not yet commercialized at scale, materials in the indium–aluminum–chalcogenide family are of interest as alternatives to conventional semiconductors and transparent conductors when specific performance windows (such as visible-light activity or anion mobility) are required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.0000200 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8600 | eV/atom | — |