InAgSnS4 is a quaternary compound in the metal sulfide family, combining indium, silver, tin, and sulfur elements. This material is primarily of research and developmental interest rather than a mature commercial product, with potential applications in semiconductor, optoelectronic, and thermoelectric device research where mixed-metal sulfides offer tunable electronic properties. Engineers would consider this compound when exploring materials for photovoltaic absorbers, ionic conductors, or specialized solid-state devices where the unique combination of elements provides advantages over binary or ternary alternatives in band gap engineering or carrier mobility.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.815 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4290 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4692 | eV/atom | — |