InAgS2 — Properties & Data | MatWorld

InAgS2

metal

· InAgS2

InAgS2 is a ternary metal sulfide compound combining indium, silver, and sulfur, belonging to the family of chalcogenide semiconductors and mixed-metal sulfides. This material is primarily investigated in research contexts for optoelectronic and thermoelectric applications, where the combination of metallic and semiconducting character offers potential advantages in energy conversion and light-emitting device architectures. InAgS2 and related ternary sulfides are of interest to materials scientists exploring alternatives to conventional binary semiconductors, particularly for applications requiring tunable bandgaps or enhanced electrical-thermal coupling.

thermoelectric energy conversionoptoelectronic devices (research phase)infrared detectors (developmental)photovoltaic absorber layers (experimental)semiconductor heterostructures

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Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	56.40	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3900	-	DFT · OptB88vdW
Shear Modulus(G)	15.08	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.781	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.2930	eV	DFT · OptB88vdW
↳	1.615	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	30.09	-	DFT · OptB88vdW
↳	13.08	-	DFT · PBE
↳	21.52 range 19.69–23.35median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	11.18	-	DFT · OptB88vdW
↳	4.558	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.05667	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.09667	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.8913	C/m²	DFT · OptB88vdW
↳	0.1458	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000222	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00179	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-43.77	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	277.7	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	30.46	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4583	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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InAgS2

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