InAgP2Se6 is a ternary chalcogenide compound combining indium, silver, phosphorus, and selenium—a member of the layered metal chalcogenide family with potential for two-dimensional materials applications. This is a research-stage material studied for its layered crystal structure and exfoliable properties, making it a candidate for emerging applications in nanoelectronics, optoelectronics, and heterogeneous device fabrication where van der Waals materials are explored as alternatives to graphene and transition metal dichalcogenides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 31.47 | GPa | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 78.87 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2800 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 16.24 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.038 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4630 | eV | DFT · OptB88vdW | ||
| ↳ | 1.376 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 10.57 | - | DFT · OptB88vdW | ||
| ↳ | 8.057 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.1633 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.6900 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000344 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00141 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -62.61 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 367.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.88 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2036 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data