InAgP₂S₆ is a layered metal chalcogenide compound combining indium, silver, phosphorus, and sulfur—a material family that bridges metallic and semiconducting properties. This is a research-phase material not yet widely commercialized; compounds in this family are being investigated for applications requiring weak interlayer bonding, tunable electronic properties, or anisotropic mechanical behavior. The material's structural characteristics make it relevant to emerging technologies in nanoelectronics, optoelectronics, and heterostructure engineering where layer-by-layer assembly or exfoliation is desirable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.68 | GPa | — | ||
Exfoliation Energy(Eexf) | 70.53 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 19.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.629 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9790 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 15.76 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -80.25 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3568 | eV/atom | — |