InAgN3 is a ternary compound combining indium, silver, and nitrogen, belonging to the family of metal nitrides and intermetallic compounds. This material is primarily of research interest rather than established industrial production, with potential applications in semiconductor technology, optoelectronics, and high-performance coatings where the combined properties of indium and silver nitrides could provide benefits such as improved electrical conductivity, thermal stability, or unique optical characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.0000690 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.960 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data