InAg2BiSe4 is a quaternary semiconductor compound combining indium, silver, bismuth, and selenium elements, belonging to the family of chalcogenide semiconductors with potential thermoelectric and optoelectronic properties. This is primarily a research-phase material studied for its electronic and thermal transport characteristics, with applications being explored in thermoelectric energy conversion and infrared sensing rather than established commercial use. The material's multi-element composition offers tunable band structure compared to simpler binary semiconductors, making it of interest to researchers developing next-generation thermal-to-electric conversion devices and specialized photonic detectors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.396 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01100 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3262 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data