In8 Bi4 S18

semiconductor

· In8 Bi4 S18

In8Bi4S18 is a quaternary chalcogenide semiconductor compound combining indium, bismuth, and sulfur in a layered crystal structure. This material belongs to the family of mixed-metal sulfides being investigated for thermoelectric and optoelectronic applications, where its layered architecture and narrow bandgap make it potentially valuable for energy conversion devices operating at moderate temperatures. While primarily a research-phase compound rather than established in high-volume production, materials in this chemical family are attracting attention as alternatives to lead-based thermoelectrics and as candidates for photovoltaic absorbers in specialized energy applications.

thermoelectric energy conversionlayered semiconductor researchphotovoltaic absorber layerslow-temperature power generationoptoelectronic devicesmaterials screening for sustainable electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.620	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5610	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In8 Bi4 S18

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control