In₄Bi₃S₁₀ is a quaternary semiconductor compound belonging to the indium-bismuth-sulfide family, combining elements from Groups III, V, and VI of the periodic table. This material is primarily of research and developmental interest for thermoelectric and optoelectronic applications, where layered sulfide semiconductors offer potential advantages in tuning bandgap and lattice thermal conductivity. The In-Bi-S system is being explored as an alternative to conventional thermoelectrics and narrow-bandgap semiconductors, though industrial adoption remains limited compared to more established compounds like Bi₂Te₃ or CIGS photovoltaics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.420 | eV | — |