In4 Sn4 O14
semiconductorIn₄Sn₄O₁₄ is a mixed-metal oxide semiconductor composed of indium and tin oxides in a 1:1 stoichiometric ratio, belonging to the broader family of transparent conducting oxides (TCOs) and indium-tin oxide (ITO) variants. This compound is primarily investigated in research contexts for optoelectronic and photocatalytic applications, where the dual-metal oxide structure offers potential advantages in charge carrier mobility, optical transparency, and catalytic activity compared to single-component oxides. Engineers consider this material for applications requiring transparent electrodes, gas sensing, or photodegradation processes, though it remains largely in the development phase relative to established ITO or SnO₂ alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |