In4 P4 O16

semiconductor

· In4 P4 O16

In₄P₄O₁₆ is an indium phosphorus oxynitride compound belonging to the family of III-V semiconductor oxides. This material represents an emerging class of wide-bandgap semiconductors that combines indium and phosphorus with oxygen, potentially offering enhanced electronic and optoelectronic performance compared to traditional binary semiconductors. Research into this composition is driven by the need for materials suitable for high-temperature, high-power, and radiation-resistant device applications in next-generation semiconductor technologies.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature electronicsradiation-resistant componentsresearch-phase materialspower semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.062	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.103	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4 P4 O16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control