In4 Hg2 O8

semiconductor

· In4 Hg2 O8

In₄Hg₂O₈ is an inorganic oxide semiconductor compound containing indium, mercury, and oxygen. This material belongs to the family of mixed-metal oxides and is primarily of research interest rather than established industrial production. The compound is investigated for potential optoelectronic and semiconductor device applications, though it remains largely experimental; its mercury content and relative scarcity limit widespread adoption compared to more conventional oxide semiconductors like indium tin oxide (ITO) or gallium arsenide.

research semiconductorsexperimental optoelectronicsmixed-metal oxide studiesthin-film deposition researchphotoconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7473	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.320	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4 Hg2 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control