In4 H20 N8 F8

semiconductor

· In4 H20 N8 F8

This is an indium nitride fluoride compound (In₄H₂₀N₈F₈), a research-phase semiconductor material combining indium nitride with fluorine substitution. While not yet commercialized, this composition represents experimental work in wide-bandgap semiconductor chemistry, potentially relevant to high-frequency or high-temperature electronic applications where fluorine doping can modulate electronic properties or improve stability.

research semiconductorswide-bandgap electronicshigh-frequency devicesthermal stability studiescompound semiconductor developmentmaterials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	45.43	GPa	—
Shear Modulus(G)	15.92	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.685	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9890	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4 H20 N8 F8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control