In4 H20 N8 F8
semiconductor· In4 H20 N8 F8
This is an indium nitride fluoride compound (In₄H₂₀N₈F₈), a research-phase semiconductor material combining indium nitride with fluorine substitution. While not yet commercialized, this composition represents experimental work in wide-bandgap semiconductor chemistry, potentially relevant to high-frequency or high-temperature electronic applications where fluorine doping can modulate electronic properties or improve stability.
research semiconductorswide-bandgap electronicshigh-frequency devicesthermal stability studiescompound semiconductor developmentmaterials discovery
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.