In4 Ga2 Bi2 S12

semiconductor

· In4 Ga2 Bi2 S12

In₄Ga₂Bi₂S₁₂ is a quaternary chalcogenide semiconductor compound combining indium, gallium, bismuth, and sulfur. This material belongs to the family of complex sulfide semiconductors and is primarily of research and developmental interest rather than established industrial production. The compound is investigated for potential optoelectronic and photovoltaic applications where its layered structure and tunable bandgap could offer advantages over conventional binary or ternary semiconductors, though it remains in the early exploration phase with limited commercial deployment.

photovoltaic researchoptoelectronic devicesinfrared detectorsexperimental semiconductorsthin-film applicationsmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.790	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6100	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4 Ga2 Bi2 S12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control